Thermodynamic modeling of the Ni-Al-Ga-N system

B. A. Hull, S. E. Mohney, Z. K. Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Isothermal sections in the Ni-Al-Ga-N quaternary phase diagram were calculated to provide a greater understanding of interfacial reactions between Ni contacts and AlxGa1-xN. The calculations were performed employing a thermodynamic database of the Ni-Al-Ga-N system that was constructed by combining the six binary systems of the four component system. The model of the Ga-N binary system was created in this work. The models of the Ni-Ga and Ni-Al systems, both of which were taken from the literature, were modified to be compatible with one another. Thermodynamic data and phase boundaries for other binary systems were taken from the literature, as was information on portions of the Al-Ga-N and Ni-Al-Ga phase diagrams. The calculated sections reveal that during reaction between Ni and AlxGa1-xN, Ni is favored to react with the GaN component of the semiconductor alloy, leaving an Al-enriched AlxGa1-xN. These predictions are consistent with a recent analysis of the Ni, Al, and Ga elemental distributions across the interface between a Ni thin film and an Al0.47Ga0.53N epitaxial layer following annealing at 850 °C. Consideration of the thermodynamic driving forces suggests that this may be a general phenomenon existing in other metal-Al-Ga-N systems.

Original languageEnglish (US)
Pages (from-to)1742-1751
Number of pages10
JournalJournal of Materials Research
Volume19
Issue number6
DOIs
StatePublished - Jun 1 2004

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Thermodynamics
thermodynamics
Phase diagrams
phase diagrams
Epitaxial layers
Phase boundaries
Surface chemistry
electric contacts
Metals
Annealing
Semiconductor materials
Thin films
annealing
thin films
predictions
metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Isothermal sections in the Ni-Al-Ga-N quaternary phase diagram were calculated to provide a greater understanding of interfacial reactions between Ni contacts and AlxGa1-xN. The calculations were performed employing a thermodynamic database of the Ni-Al-Ga-N system that was constructed by combining the six binary systems of the four component system. The model of the Ga-N binary system was created in this work. The models of the Ni-Ga and Ni-Al systems, both of which were taken from the literature, were modified to be compatible with one another. Thermodynamic data and phase boundaries for other binary systems were taken from the literature, as was information on portions of the Al-Ga-N and Ni-Al-Ga phase diagrams. The calculated sections reveal that during reaction between Ni and AlxGa1-xN, Ni is favored to react with the GaN component of the semiconductor alloy, leaving an Al-enriched AlxGa1-xN. These predictions are consistent with a recent analysis of the Ni, Al, and Ga elemental distributions across the interface between a Ni thin film and an Al0.47Ga0.53N epitaxial layer following annealing at 850 °C. Consideration of the thermodynamic driving forces suggests that this may be a general phenomenon existing in other metal-Al-Ga-N systems.",
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Thermodynamic modeling of the Ni-Al-Ga-N system. / Hull, B. A.; Mohney, S. E.; Liu, Z. K.

In: Journal of Materials Research, Vol. 19, No. 6, 01.06.2004, p. 1742-1751.

Research output: Contribution to journalArticle

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