Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations

Sergio C. De La Barrera; Yu Chuan Lin; Sarah M. Eichfeld; Joshua A. Robinson; Qin Gao; Michael Widom; Randall M. Feenstra

doi:10.1116/1.4954642

Thickness characterization of atomically thin WSe₂ on epitaxial graphene by low-energy electron reflectivity oscillations

Sergio C. De La Barrera, Yu Chuan Lin, Sarah M. Eichfeld, Joshua A. Robinson, Qin Gao, Michael Widom, Randall M. Feenstra

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8 Scopus citations

Abstract

In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe₂ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe₂-graphene heterostructures is studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe₂ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe₂ electron reflectivity. This method allows for unambiguous counting of WSe₂ layers, and furthermore may be applied to other two-dimensional transition metal dichalcogenide materials.

Original language	English (US)
Article number	04J106
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	34
Issue number	4
DOIs	https://doi.org/10.1116/1.4954642
State	Published - Jul 1 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations",

abstract = "In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe2 on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe2-graphene heterostructures is studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe2 states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe2 electron reflectivity. This method allows for unambiguous counting of WSe2 layers, and furthermore may be applied to other two-dimensional transition metal dichalcogenide materials.",

author = "{De La Barrera}, {Sergio C.} and Lin, {Yu Chuan} and Eichfeld, {Sarah M.} and Robinson, {Joshua A.} and Qin Gao and Michael Widom and Feenstra, {Randall M.}",

note = "Funding Information: The authors are grateful to P. Mende and S. Satpathy for useful discussions. This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. Publisher Copyright: {\textcopyright} 2016 American Vacuum Society.",

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Thickness characterization of atomically thin WSe₂ on epitaxial graphene by low-energy electron reflectivity oscillations. / De La Barrera, Sergio C.; Lin, Yu Chuan; Eichfeld, Sarah M. et al.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 34, No. 4, 04J106, 01.07.2016.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations

AU - De La Barrera, Sergio C.

AU - Lin, Yu Chuan

AU - Eichfeld, Sarah M.

AU - Robinson, Joshua A.

AU - Gao, Qin

AU - Widom, Michael

AU - Feenstra, Randall M.

N1 - Funding Information: The authors are grateful to P. Mende and S. Satpathy for useful discussions. This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. Publisher Copyright: © 2016 American Vacuum Society.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe2 on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe2-graphene heterostructures is studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe2 states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe2 electron reflectivity. This method allows for unambiguous counting of WSe2 layers, and furthermore may be applied to other two-dimensional transition metal dichalcogenide materials.

AB - In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe2 on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe2-graphene heterostructures is studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe2 states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe2 electron reflectivity. This method allows for unambiguous counting of WSe2 layers, and furthermore may be applied to other two-dimensional transition metal dichalcogenide materials.

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Thickness characterization of atomically thin WSe₂ on epitaxial graphene by low-energy electron reflectivity oscillations

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