Thickness dependence of critical current density in MgB2 films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

Mina Hanna, Shufang Wang, Joan Marie Redwing, X. X. Xi, Kamel Salama

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A study was performed to examine the Jc behavior as a function of thickness in MgB2 films fabricated by ex situ annealing at 840 °C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300nm and 10νm. The values of Jc range from 1.2 × 107Acm-2 for 300nm to 1.9 × 10 5Acm-2 for 10νm film thicknesses at 20K and self-field. The study shows that the critical current density (Jc) in MgB 2 films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (Ic) reaches its maximum value of 728Acm-1 width at ∼1νm thick MgB2 films at 20K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which Ic reaches its maximum value. The high J c values carried by our films show that the ex situ fabrication method can produce high quality MgB2 films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

Original languageEnglish (US)
Article number015024
JournalSuperconductor Science and Technology
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2009

Fingerprint

Chemical vapor deposition
critical current
Vapors
vapor deposition
Annealing
vapors
current density
annealing
Film thickness
film thickness
conductors
Boron
Critical currents
Pulsed lasers
Thick films
Tapes
tapes
thick films
pulsed lasers
boron

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "A study was performed to examine the Jc behavior as a function of thickness in MgB2 films fabricated by ex situ annealing at 840 °C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300nm and 10νm. The values of Jc range from 1.2 × 107Acm-2 for 300nm to 1.9 × 10 5Acm-2 for 10νm film thicknesses at 20K and self-field. The study shows that the critical current density (Jc) in MgB 2 films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (Ic) reaches its maximum value of 728Acm-1 width at ∼1νm thick MgB2 films at 20K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which Ic reaches its maximum value. The high J c values carried by our films show that the ex situ fabrication method can produce high quality MgB2 films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.",
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Thickness dependence of critical current density in MgB2 films fabricated by ex situ annealing of CVD-grown B films in Mg vapor. / Hanna, Mina; Wang, Shufang; Redwing, Joan Marie; Xi, X. X.; Salama, Kamel.

In: Superconductor Science and Technology, Vol. 22, No. 1, 015024, 01.01.2009.

Research output: Contribution to journalArticle

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AU - Salama, Kamel

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