Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films

Lyndsey M. Denis, Giovanni Esteves, Julian Walker, Jacob L. Jones, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Scaling effects were investigated in tetragonal {001} textured Pb(Zr0·3Ti0.7)O3 thin films doped with 2 mol% Nb over a thickness range of 0.27 μm–1.11 μm. Scaling effects refer to the size-induced degradation of properties at length scales exceeding those associated with the ferroelectric stability limit. The irreversible Rayleigh coefficient was found to be thickness-dependent, indicating suppression of the extrinsic contributions to the relative permittivity for all clamped films. Both defects in the seed layer and substrate clamping contributed to the observed thickness dependence. The influence of the seed layer on dielectric properties was accounted for using a capacitor in series model. After the films were partially declamped from the substrate, the irreversible contributions increased up to 23% in Nb-doped films and became more frequency dependent (by up to 29%). The suppressed frequency dependence in the clamped films was attributed to the pinning of irreversible domain walls active at lower frequencies. Both the seed layer and substrate clamping contributed to the pinning of irreversible domain walls.

Original languageEnglish (US)
Pages (from-to)243-252
Number of pages10
JournalActa Materialia
Volume151
DOIs
StatePublished - Jun 1 2018

Fingerprint

Domain walls
Seed
Thin films
Substrates
Dielectric properties
Ferroelectric materials
Capacitors
Permittivity
Degradation
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Denis, Lyndsey M. ; Esteves, Giovanni ; Walker, Julian ; Jones, Jacob L. ; Trolier-McKinstry, Susan E. / Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films. In: Acta Materialia. 2018 ; Vol. 151. pp. 243-252.
@article{401e2104f5ce40878e1c9faea2b0cc53,
title = "Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films",
abstract = "Scaling effects were investigated in tetragonal {001} textured Pb(Zr0·3Ti0.7)O3 thin films doped with 2 mol{\%} Nb over a thickness range of 0.27 μm–1.11 μm. Scaling effects refer to the size-induced degradation of properties at length scales exceeding those associated with the ferroelectric stability limit. The irreversible Rayleigh coefficient was found to be thickness-dependent, indicating suppression of the extrinsic contributions to the relative permittivity for all clamped films. Both defects in the seed layer and substrate clamping contributed to the observed thickness dependence. The influence of the seed layer on dielectric properties was accounted for using a capacitor in series model. After the films were partially declamped from the substrate, the irreversible contributions increased up to 23{\%} in Nb-doped films and became more frequency dependent (by up to 29{\%}). The suppressed frequency dependence in the clamped films was attributed to the pinning of irreversible domain walls active at lower frequencies. Both the seed layer and substrate clamping contributed to the pinning of irreversible domain walls.",
author = "Denis, {Lyndsey M.} and Giovanni Esteves and Julian Walker and Jones, {Jacob L.} and Trolier-McKinstry, {Susan E.}",
year = "2018",
month = "6",
day = "1",
doi = "10.1016/j.actamat.2018.03.046",
language = "English (US)",
volume = "151",
pages = "243--252",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",

}

Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films. / Denis, Lyndsey M.; Esteves, Giovanni; Walker, Julian; Jones, Jacob L.; Trolier-McKinstry, Susan E.

In: Acta Materialia, Vol. 151, 01.06.2018, p. 243-252.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films

AU - Denis, Lyndsey M.

AU - Esteves, Giovanni

AU - Walker, Julian

AU - Jones, Jacob L.

AU - Trolier-McKinstry, Susan E.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - Scaling effects were investigated in tetragonal {001} textured Pb(Zr0·3Ti0.7)O3 thin films doped with 2 mol% Nb over a thickness range of 0.27 μm–1.11 μm. Scaling effects refer to the size-induced degradation of properties at length scales exceeding those associated with the ferroelectric stability limit. The irreversible Rayleigh coefficient was found to be thickness-dependent, indicating suppression of the extrinsic contributions to the relative permittivity for all clamped films. Both defects in the seed layer and substrate clamping contributed to the observed thickness dependence. The influence of the seed layer on dielectric properties was accounted for using a capacitor in series model. After the films were partially declamped from the substrate, the irreversible contributions increased up to 23% in Nb-doped films and became more frequency dependent (by up to 29%). The suppressed frequency dependence in the clamped films was attributed to the pinning of irreversible domain walls active at lower frequencies. Both the seed layer and substrate clamping contributed to the pinning of irreversible domain walls.

AB - Scaling effects were investigated in tetragonal {001} textured Pb(Zr0·3Ti0.7)O3 thin films doped with 2 mol% Nb over a thickness range of 0.27 μm–1.11 μm. Scaling effects refer to the size-induced degradation of properties at length scales exceeding those associated with the ferroelectric stability limit. The irreversible Rayleigh coefficient was found to be thickness-dependent, indicating suppression of the extrinsic contributions to the relative permittivity for all clamped films. Both defects in the seed layer and substrate clamping contributed to the observed thickness dependence. The influence of the seed layer on dielectric properties was accounted for using a capacitor in series model. After the films were partially declamped from the substrate, the irreversible contributions increased up to 23% in Nb-doped films and became more frequency dependent (by up to 29%). The suppressed frequency dependence in the clamped films was attributed to the pinning of irreversible domain walls active at lower frequencies. Both the seed layer and substrate clamping contributed to the pinning of irreversible domain walls.

UR - http://www.scopus.com/inward/record.url?scp=85045427328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045427328&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2018.03.046

DO - 10.1016/j.actamat.2018.03.046

M3 - Article

AN - SCOPUS:85045427328

VL - 151

SP - 243

EP - 252

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -