Thin channel a-Si:H thin film transistors

D. B. Thomasson, Thomas Nelson Jackson

Research output: Contribution to conferencePaper

Abstract

This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

Original languageEnglish (US)
Pages70-71
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

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Thin film transistors
Processing
Throughput
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Thomasson, D. B., & Jackson, T. N. (1996). Thin channel a-Si:H thin film transistors. 70-71. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .
Thomasson, D. B. ; Jackson, Thomas Nelson. / Thin channel a-Si:H thin film transistors. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .2 p.
@conference{d7dc018164e447469cab7325cf98ba89,
title = "Thin channel a-Si:H thin film transistors",
abstract = "This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.",
author = "Thomasson, {D. B.} and Jackson, {Thomas Nelson}",
year = "1996",
month = "1",
day = "1",
language = "English (US)",
pages = "70--71",
note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

}

Thomasson, DB & Jackson, TN 1996, 'Thin channel a-Si:H thin film transistors', Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96 - 6/26/96 pp. 70-71.

Thin channel a-Si:H thin film transistors. / Thomasson, D. B.; Jackson, Thomas Nelson.

1996. 70-71 Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Thin channel a-Si:H thin film transistors

AU - Thomasson, D. B.

AU - Jackson, Thomas Nelson

PY - 1996/1/1

Y1 - 1996/1/1

N2 - This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

AB - This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

UR - http://www.scopus.com/inward/record.url?scp=0029713924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029713924&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029713924

SP - 70

EP - 71

ER -

Thomasson DB, Jackson TN. Thin channel a-Si:H thin film transistors. 1996. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .