Thin channel a-Si:H thin film transistors

D. B. Thomasson, T. N. Jackson

Research output: Contribution to conferencePaper

Abstract

This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

Original languageEnglish (US)
Pages70-71
Number of pages2
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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