Thin film silicon and germanium for uncooled microbolometer applications

D. B.Saint John, H. B. Shinb, M. Y. Lee, E. C. Dickey, N. J. Podraza, T. N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Hydrogenated silicon (Si:H) and germanium (Ge:H) are assessed for use as the resistive sensing layer in uncooled infrared microbolometer applications. N-type doped Si:H and undoped Ge:H thin films have been deposited using plasma enhanced chemical vapor deposition (PECVD) and monitored during growth using in situ, real time spectroscopic ellipsometry (RTSE) to track changes in the growth evolution and structure occurring within a single film as a function of thickness. Amorphous germanium (a-Ge) films prepared by sputtering and amorphous n-type doped silicon carbon alloy films (a-Si1-xCx:H) films prepared by PECVD have also been studied by ex situ spectroscopic ellipsometry. Variations in the electrical properties of interest including film resistivity, temperature coefficient of resistance, and 1/f noise character in the form of the normalized Hooge parameter have been tracked as a function of the structure of the material as determined by deposition conditions and characterized by spectroscopic ellipsometry. Such notable variations observed include the effects of transitioning from amorphous to microcrystalline material in n-type Si:H; the addition of carbon to increase disorder in n-type a-Si:H; effects of process parameters for sputtered a-Ge; and a comparison of n-type a-Si:H, ntype a-Si1-xCx:H, and undoped a-Ge:H properties for films all prepared by PECVD.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXVII
DOIs
StatePublished - Sep 26 2011
EventInfrared Technology and Applications XXXVII - Orlando, FL, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8012
ISSN (Print)0277-786X

Other

OtherInfrared Technology and Applications XXXVII
CountryUnited States
CityOrlando, FL
Period4/25/114/29/11

Fingerprint

Germanium
Microbolometer
Silicon
Thin Films
germanium
Spectroscopic Ellipsometry
Thin films
Spectroscopic ellipsometry
Chemical Vapor Deposition
silicon
Plasma enhanced chemical vapor deposition
thin films
ellipsometry
Plasma
vapor deposition
Carbon
1/f Noise
Sputtering
carbon
Electrical Properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

John, D. B. S., Shinb, H. B., Lee, M. Y., Dickey, E. C., Podraza, N. J., & Jackson, T. N. (2011). Thin film silicon and germanium for uncooled microbolometer applications. In Infrared Technology and Applications XXXVII [1] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8012). https://doi.org/10.1117/12.884269
John, D. B.Saint ; Shinb, H. B. ; Lee, M. Y. ; Dickey, E. C. ; Podraza, N. J. ; Jackson, T. N. / Thin film silicon and germanium for uncooled microbolometer applications. Infrared Technology and Applications XXXVII. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Hydrogenated silicon (Si:H) and germanium (Ge:H) are assessed for use as the resistive sensing layer in uncooled infrared microbolometer applications. N-type doped Si:H and undoped Ge:H thin films have been deposited using plasma enhanced chemical vapor deposition (PECVD) and monitored during growth using in situ, real time spectroscopic ellipsometry (RTSE) to track changes in the growth evolution and structure occurring within a single film as a function of thickness. Amorphous germanium (a-Ge) films prepared by sputtering and amorphous n-type doped silicon carbon alloy films (a-Si1-xCx:H) films prepared by PECVD have also been studied by ex situ spectroscopic ellipsometry. Variations in the electrical properties of interest including film resistivity, temperature coefficient of resistance, and 1/f noise character in the form of the normalized Hooge parameter have been tracked as a function of the structure of the material as determined by deposition conditions and characterized by spectroscopic ellipsometry. Such notable variations observed include the effects of transitioning from amorphous to microcrystalline material in n-type Si:H; the addition of carbon to increase disorder in n-type a-Si:H; effects of process parameters for sputtered a-Ge; and a comparison of n-type a-Si:H, ntype a-Si1-xCx:H, and undoped a-Ge:H properties for films all prepared by PECVD.",
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John, DBS, Shinb, HB, Lee, MY, Dickey, EC, Podraza, NJ & Jackson, TN 2011, Thin film silicon and germanium for uncooled microbolometer applications. in Infrared Technology and Applications XXXVII., 1, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8012, Infrared Technology and Applications XXXVII, Orlando, FL, United States, 4/25/11. https://doi.org/10.1117/12.884269

Thin film silicon and germanium for uncooled microbolometer applications. / John, D. B.Saint; Shinb, H. B.; Lee, M. Y.; Dickey, E. C.; Podraza, N. J.; Jackson, T. N.

Infrared Technology and Applications XXXVII. 2011. 1 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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John DBS, Shinb HB, Lee MY, Dickey EC, Podraza NJ, Jackson TN. Thin film silicon and germanium for uncooled microbolometer applications. In Infrared Technology and Applications XXXVII. 2011. 1. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.884269