Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2

Yiyang Gong, Xiaotian Zhang, Joan M. Redwing, Thomas N. Jackson

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.

Original languageEnglish (US)
Pages (from-to)6280-6284
Number of pages5
JournalJournal of Electronic Materials
Volume45
Issue number12
DOIs
StatePublished - Dec 1 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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