We report on thin film transistors using continuous WSe2 thin films synthesized by metal organic chemical vapor deposition at 400°C. O2 plasma etching is used to provide precise thickness modification of the WSe2 thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe2 films. P-channel thin film transistors with plasma-thinned 3 nm WSe2 channels have mobility ∼0.01 cm2/Vs and current on–off ratio greater than 104. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry