Three-dimensional phase-field simulation of domain structures in ferroelectric islands

J. X. Zhang, R. Wu, S. Choudhury, Y. L. Li, S. Y. Hu, L. Q. Chen

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

A three-dimensional phase-field model was developed for studying domain structures in ferroelectric islands attached onto a substrate. It simultaneously takes into account the long-range electric and elastic interactions, substrate constraint, as well as the stress relaxation caused by the surfaces of an island. The phase-field simulations demonstrated that the domain structures of ferroelectric islands could be dramatically different from those of continuous thin films due to the change of stress state. The stress distribution inside islands is highly dependent on the aspect ratio of the islands. It provides us an effective way for engineering the domain structures of ferroelectric materials.

Original languageEnglish (US)
Article number122906
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - Apr 3 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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