Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30

J. F. Meng, N. V.Chandra Shekar, John V. Badding, G. S. Nolas

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Semiconducting germanium clathrates are thermoelectric materials with cage-like structures that exhibit "phonon glass, electron crystal" behavior. We report an improvement by at least a factor of 3 in the dimensionless thermoelectric figure of merit for the clathrate semiconductor Sr8Ga16Ge30 upon compression to 7 GPa. These results suggest that there is potential for further improving the thermoelectric properties of this material at ambient pressure by chemical or other methods.

Original languageEnglish (US)
Pages (from-to)1730-1733
Number of pages4
JournalJournal of Applied Physics
Volume89
Issue number3
DOIs
StatePublished - Feb 1 2001

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clathrates
figure of merit
thermoelectric materials
augmentation
germanium
glass
crystals
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Meng, J. F. ; Shekar, N. V.Chandra ; Badding, John V. ; Nolas, G. S. / Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30. In: Journal of Applied Physics. 2001 ; Vol. 89, No. 3. pp. 1730-1733.
@article{d8c96df36d1646d587aeafc5702ad9e1,
title = "Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30",
abstract = "Semiconducting germanium clathrates are thermoelectric materials with cage-like structures that exhibit {"}phonon glass, electron crystal{"} behavior. We report an improvement by at least a factor of 3 in the dimensionless thermoelectric figure of merit for the clathrate semiconductor Sr8Ga16Ge30 upon compression to 7 GPa. These results suggest that there is potential for further improving the thermoelectric properties of this material at ambient pressure by chemical or other methods.",
author = "Meng, {J. F.} and Shekar, {N. V.Chandra} and Badding, {John V.} and Nolas, {G. S.}",
year = "2001",
month = "2",
day = "1",
doi = "10.1063/1.1334366",
language = "English (US)",
volume = "89",
pages = "1730--1733",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30. / Meng, J. F.; Shekar, N. V.Chandra; Badding, John V.; Nolas, G. S.

In: Journal of Applied Physics, Vol. 89, No. 3, 01.02.2001, p. 1730-1733.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30

AU - Meng, J. F.

AU - Shekar, N. V.Chandra

AU - Badding, John V.

AU - Nolas, G. S.

PY - 2001/2/1

Y1 - 2001/2/1

N2 - Semiconducting germanium clathrates are thermoelectric materials with cage-like structures that exhibit "phonon glass, electron crystal" behavior. We report an improvement by at least a factor of 3 in the dimensionless thermoelectric figure of merit for the clathrate semiconductor Sr8Ga16Ge30 upon compression to 7 GPa. These results suggest that there is potential for further improving the thermoelectric properties of this material at ambient pressure by chemical or other methods.

AB - Semiconducting germanium clathrates are thermoelectric materials with cage-like structures that exhibit "phonon glass, electron crystal" behavior. We report an improvement by at least a factor of 3 in the dimensionless thermoelectric figure of merit for the clathrate semiconductor Sr8Ga16Ge30 upon compression to 7 GPa. These results suggest that there is potential for further improving the thermoelectric properties of this material at ambient pressure by chemical or other methods.

UR - http://www.scopus.com/inward/record.url?scp=0001106635&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001106635&partnerID=8YFLogxK

U2 - 10.1063/1.1334366

DO - 10.1063/1.1334366

M3 - Article

AN - SCOPUS:0001106635

VL - 89

SP - 1730

EP - 1733

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -