Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

S. L. Wright, P. M. Solomon, H. Baratte, D. C. LaTulipe, T. N. Jackson

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.

Original languageEnglish (US)
Pages (from-to)2285-2287
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number20
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors'. Together they form a unique fingerprint.

Cite this