Threshold voltage instability in a-Si:H TFTs and the implications for flexible displays and circuits

D. R. Allee, S. M. Venugopal, R. Shringarpure, K. Kaftanoglu, S. G. Uppili, L. T. Clark, Bryan Vogt, E. J. Bawolek

Research output: Contribution to journalConference article

Abstract

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

Original languageEnglish (US)
Pages (from-to)1297-1300
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume8
StatePublished - Dec 1 2008
Event8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of
Duration: Oct 13 2008Oct 17 2008

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Allee, D. R., Venugopal, S. M., Shringarpure, R., Kaftanoglu, K., Uppili, S. G., Clark, L. T., Vogt, B., & Bawolek, E. J. (2008). Threshold voltage instability in a-Si:H TFTs and the implications for flexible displays and circuits. Proceedings of International Meeting on Information Display, 8, 1297-1300.