Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.
|Original language||English (US)|
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|State||Published - Dec 1 2008|
|Event||8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of|
Duration: Oct 13 2008 → Oct 17 2008
All Science Journal Classification (ASJC) codes