Ti/Al ohmic contacts to n-type GaN nanowires

Gangfeng Ye, Kelvin Shi, Robert Burke, Joan M. Redwing, Suzanne E. Mohney

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10 -8 ωcm 2) upon annealing at 600 C for 15s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

Original languageEnglish (US)
Article number876287
JournalJournal of Nanomaterials
Volume2011
DOIs
StatePublished - Dec 1 2011

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Ohmic contacts
Contact resistance
Nanowires
Annealing
Thermodynamic stability
Titanium
Aluminum
Electric lines
Transmission electron microscopy
Oxidation
Geometry
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Ti/Al ohmic contacts to n-type GaN nanowires",
abstract = "Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10 -8 ωcm 2) upon annealing at 600 C for 15s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.",
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Ti/Al ohmic contacts to n-type GaN nanowires. / Ye, Gangfeng; Shi, Kelvin; Burke, Robert; Redwing, Joan M.; Mohney, Suzanne E.

In: Journal of Nanomaterials, Vol. 2011, 876287, 01.12.2011.

Research output: Contribution to journalArticle

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T1 - Ti/Al ohmic contacts to n-type GaN nanowires

AU - Ye, Gangfeng

AU - Shi, Kelvin

AU - Burke, Robert

AU - Redwing, Joan M.

AU - Mohney, Suzanne E.

PY - 2011/12/1

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AB - Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10 -8 ωcm 2) upon annealing at 600 C for 15s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

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