Ti/Al ohmic contacts to n-type GaN nanowires

Gangfeng Ye, Kelvin Shi, Robert Burke, Joan M. Redwing, Suzanne E. Mohney

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2 Scopus citations

Abstract

Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10 -8 ωcm 2) upon annealing at 600 C for 15s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

Original languageEnglish (US)
Article number876287
JournalJournal of Nanomaterials
Volume2011
DOIs
StatePublished - Dec 1 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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