Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al 0.58Ga 0.42N

M. A. Miller, B. H. Koo, K. H.A. Bogart, Suzanne E. Mohney

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7 Scopus citations

Abstract

Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al 0.58Ga 0.42N. The reaction depth of low-resistance V-based contacts to as-received n-Al 0.58Ga 0.42N is very limited, unlike previously reported Ti-based contacts to n-Al x Ga 1-x N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al 0.58Ga 0.42N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the order of 40 nm. To achieve a low contact resistance on plasma-etched n-Al 0.58Ga 0.42N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-Al 0.58Ga 0.42N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-Al 0.58Ga 0.42N. The similarity in phase formation in the contacts to plasma-etched n-Al 0.58Ga 0.42N is likely the reason behind the similarity in specific contact resistances.

Original languageEnglish (US)
Pages (from-to)564-568
Number of pages5
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - May 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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