Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al 0.58Ga 0.42N

M. A. Miller, B. H. Koo, K. H.A. Bogart, Suzanne E. Mohney

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al 0.58Ga 0.42N. The reaction depth of low-resistance V-based contacts to as-received n-Al 0.58Ga 0.42N is very limited, unlike previously reported Ti-based contacts to n-Al x Ga 1-x N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al 0.58Ga 0.42N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the order of 40 nm. To achieve a low contact resistance on plasma-etched n-Al 0.58Ga 0.42N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-Al 0.58Ga 0.42N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-Al 0.58Ga 0.42N. The similarity in phase formation in the contacts to plasma-etched n-Al 0.58Ga 0.42N is likely the reason behind the similarity in specific contact resistances.

Original languageEnglish (US)
Pages (from-to)564-568
Number of pages5
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - May 1 2008

Fingerprint

electric contacts
Contact resistance
contact resistance
Plasmas
Aluminum nitride
aluminum nitrides
Metallizing
Metals
Ohmic contacts
low resistance
metals
Annealing
Semiconductor materials
Transmission electron microscopy
transmission electron microscopy
annealing
Processing
Temperature
temperature
aluminum nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Miller, M. A. ; Koo, B. H. ; Bogart, K. H.A. ; Mohney, Suzanne E. / Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al 0.58Ga 0.42N. In: Journal of Electronic Materials. 2008 ; Vol. 37, No. 5. pp. 564-568.
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abstract = "Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al 0.58Ga 0.42N. The reaction depth of low-resistance V-based contacts to as-received n-Al 0.58Ga 0.42N is very limited, unlike previously reported Ti-based contacts to n-Al x Ga 1-x N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al 0.58Ga 0.42N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the order of 40 nm. To achieve a low contact resistance on plasma-etched n-Al 0.58Ga 0.42N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-Al 0.58Ga 0.42N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-Al 0.58Ga 0.42N. The similarity in phase formation in the contacts to plasma-etched n-Al 0.58Ga 0.42N is likely the reason behind the similarity in specific contact resistances.",
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Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al 0.58Ga 0.42N. / Miller, M. A.; Koo, B. H.; Bogart, K. H.A.; Mohney, Suzanne E.

In: Journal of Electronic Materials, Vol. 37, No. 5, 01.05.2008, p. 564-568.

Research output: Contribution to journalArticle

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AU - Miller, M. A.

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AB - Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al 0.58Ga 0.42N. The reaction depth of low-resistance V-based contacts to as-received n-Al 0.58Ga 0.42N is very limited, unlike previously reported Ti-based contacts to n-Al x Ga 1-x N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al 0.58Ga 0.42N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the order of 40 nm. To achieve a low contact resistance on plasma-etched n-Al 0.58Ga 0.42N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-Al 0.58Ga 0.42N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-Al 0.58Ga 0.42N. The similarity in phase formation in the contacts to plasma-etched n-Al 0.58Ga 0.42N is likely the reason behind the similarity in specific contact resistances.

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