Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides

M. Städele, B. R. Tuttle, K. Hess, L. F. Register

Research output: Contribution to journalConference article

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Abstract

We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 7 and 18 angstroms. This approach accounts for the three-dimensional microscopic structure of the model junctions and for the three-dimensional nature of the corresponding complex energy bands. The equilibrium positions of the atoms in the heterostructure are derived from first-principles density-functional calculations. We show that the present method yields qualitative and quantitative differences from conventional effective-mass theory.

Original languageEnglish (US)
Pages (from-to)405-409
Number of pages5
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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