Tilting in the arsenic-induced c(4×4) reconstruction of the GaAs{001} surface

C. Xu, J. S. Burnham, R. M. Braun, S. H. Goss, Nicholas Winograd

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The atomic geometry of the As-rich GaAs{001}-c(4×4) surface prepared by molecular-beam epitaxy has been characterized in situ. The focus of the study is to determine how excess As affects the structure of the GaAs{001} surface. We report that the second- and third-interlayer spacings are (1.48±0.10) and (1.47±0.10), respectively, in comparison to the bulk spacing of 1.41. Arsenic atoms in the first layer are observed to be dimerized along the 110 azimuth with a bond length of (2.69±0.10). Furthermore, evidence is presented that is consistent with a structure which contains both untilted and tilted dimers. The tilting is defined by a rotation about the center of the dimer bond by ±(4.3°±0.5°). These results are based on desorbed Ga+ ion distributions obtained by shadow-cone-enhanced secondary-ion mass spectrometry.

Original languageEnglish (US)
Pages (from-to)5172-5178
Number of pages7
JournalPhysical Review B
Volume52
Issue number7
DOIs
StatePublished - Jan 1 1995

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arsenic
dimers
spacing
ion distribution
azimuth
secondary ion mass spectrometry
interlayers
cones
molecular beam epitaxy
geometry
atoms

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Xu, C. ; Burnham, J. S. ; Braun, R. M. ; Goss, S. H. ; Winograd, Nicholas. / Tilting in the arsenic-induced c(4×4) reconstruction of the GaAs{001} surface. In: Physical Review B. 1995 ; Vol. 52, No. 7. pp. 5172-5178.
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Tilting in the arsenic-induced c(4×4) reconstruction of the GaAs{001} surface. / Xu, C.; Burnham, J. S.; Braun, R. M.; Goss, S. H.; Winograd, Nicholas.

In: Physical Review B, Vol. 52, No. 7, 01.01.1995, p. 5172-5178.

Research output: Contribution to journalArticle

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AU - Xu, C.

AU - Burnham, J. S.

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