@article{445a607e6c98407f80be1bfa0906d401,
title = "Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range",
abstract = "The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.",
author = "Guanjun You and Jie Liu and Zhenyu Jiang and Yiming Zhu and Aping Chen and Yong Hu and Feng Xiong and Henderson, {Ron H.} and Songlin Zhuang and Jian Xu",
note = "Funding Information: The work at the Penn State University was supported by the National Science Foundation under Grant Nos. ECCS0846018 and ECCS0824186. The work at University of Shanghai for Science and Technology is supported by NSFC under grant 61078007, Shanghai Municipal Education Commission and Shanghai Education Development Foundation under Shu Guang Project 10SG46, Science and Technology Commission of Shanghai Municipality under Grant Nos. 1052nm07100 and 11530502200, and Program for New Century Excellent Talents in University.",
year = "2013",
month = sep,
day = "16",
doi = "10.1063/1.4819850",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",
}