Time-resolved fluorescence up-conversion study of radiative recombination dynamics in III-nitride light emitting diodes over a wide bias range

Guanjun You, Jie Liu, Zhenyu Jiang, Yiming Zhu, Aping Chen, Yong Hu, Feng Xiong, Ron H. Henderson, Songlin Zhuang, Jian Xu

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Abstract

The technique of femtosecond fluorescence up-conversion was employed to explore the transient photoluminescence and carrier decay dynamics in c-plane (In,Ga)N multi-quantum-well light emitting diodes over a wide bias range. By investigating the bias dependence of initial transient photoluminescence intensity and the luminescence lifetime, the field and carrier density effects on the radiative recombination coefficient were revealed for both low and high current injection conditions, and in good agreement with the theory.

Original languageEnglish (US)
Article number121109
JournalApplied Physics Letters
Volume103
Issue number12
DOIs
StatePublished - Sep 16 2013

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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