TiN and ZrN based ohmic contacts to n-GaN

S. E. Mohney, B. P. Luther, S. D. Wolter, T. N. Jackson, R. F. Karlicek, R. S. Kern

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Metal electrical contacts that exhibit good thermal stability and desirable electrical characteristics are required for the development of high temperature devices based on the III-V nitrides. To make improvements on existing contacts or to develop new ones, information on the metallurgy of these contacts is needed. In this work, selected early transition metal-based ohmic contacts to n-GaN are examined from both a high-temperature materials chemistry and electrical standpoint.

Original languageEnglish (US)
Title of host publication1998 4th International High Temperature Electronics Conference, HITEC 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages134-137
Number of pages4
ISBN (Print)0780345401, 9780780345409
DOIs
StatePublished - Jan 1 1998
Event1998 4th International High Temperature Electronics Conference, HITEC 1998 - Allbuquerque, United States
Duration: Jun 14 1998Jun 18 1998

Publication series

Name1998 4th International High Temperature Electronics Conference, HITEC 1998

Other

Other1998 4th International High Temperature Electronics Conference, HITEC 1998
CountryUnited States
CityAllbuquerque
Period6/14/986/18/98

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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    Mohney, S. E., Luther, B. P., Wolter, S. D., Jackson, T. N., Karlicek, R. F., & Kern, R. S. (1998). TiN and ZrN based ohmic contacts to n-GaN. In 1998 4th International High Temperature Electronics Conference, HITEC 1998 (pp. 134-137). [676774] (1998 4th International High Temperature Electronics Conference, HITEC 1998). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/HITEC.1998.676774