Tin-catalyzed plasma-assisted growth of silicon nanowires

Somilkumar J. Rathi, Bhavin N. Jariwala, Joseph D. Beach, Paul Stradins, P. Craig Taylor, Xiaojun Weng, Yue Ke, Joan M. Redwing, Sumit Agarwal, Reuben T. Collins

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49 Scopus citations

Abstract

A systematic study of tin-catalyzed vapor-liquid-solid (VLS) growth of silicon nanowires by plasma-enhanced chemical vapor deposition at temperatures ranging from 300 to 400 °C is presented. Wire structure, morphology, and growth rate are characterized as a function of process variables. The nanowires are observed to have a crystalline core with a polycrystalline shell due to simultaneous VLS axial growth and vapor-solid radial growth. Axial and radial growth rates are controllable through hydrogen dilution of the plasma which affects the concentration of silane radicals in the plasma. In addition, wire length is observed to saturate with increasing growth time. Post growth chemical analysis suggests this is due to etching and disappearance of tin seeds in the hydrogen plasma which occur in parallel with wire growth. This opens up the possibility of a unique in situ approach to fabricating metal-free nanowire arrays for device applications.

Original languageEnglish (US)
Pages (from-to)3833-3839
Number of pages7
JournalJournal of Physical Chemistry C
Volume115
Issue number10
DOIs
StatePublished - Mar 17 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Rathi, S. J., Jariwala, B. N., Beach, J. D., Stradins, P., Taylor, P. C., Weng, X., Ke, Y., Redwing, J. M., Agarwal, S., & Collins, R. T. (2011). Tin-catalyzed plasma-assisted growth of silicon nanowires. Journal of Physical Chemistry C, 115(10), 3833-3839. https://doi.org/10.1021/jp1066428