Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton, L. Beyer, J. R. Williams, E. D. Luckowski, S. E. Mohney, J. M. Delucca

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Abstract

Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10-6 to 3 × 10-5 Ω cm2 on material with a doping of 1.3 × 1019 cm-3. The initial Al-Ti thickness before annealing was found to be critical to controlling the Al-Ti sheet resistance during the anneal. In addition, chemically etching the Al-Ti layer after annealing revealed pitting indicative of severe reaction between the Al-Ti and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10-5 and 4 × 10-5 Ω cm2. Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface.

Original languageEnglish (US)
Pages (from-to)1725-1729
Number of pages5
JournalSolid-State Electronics
Volume41
Issue number11
DOIs
StatePublished - Nov 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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