Titanium and titanium nitride contacts to n-type gallium nitride

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Titanium and titanium nitride contacts were fabricated on n-type GaN and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and 900 °C in AR and N2 to observe the effects of annealing environment on ohmic contact formation. Ti contacts annealed in N2 became ohmic after 1 min at 700 °C and reacted at minimum specific contact resistance of 4×10-6 Ω cm2 after 1 min at 800 °C. Ti contacts annealed in Ar required 20-25 min at 700 °C to become ohmic and also reached a minimum specific contact resistance after 1 min at 900 °C. Depth profiles of Ti contacts showed that the presence of TiN at the metal GaN interface was necessary for ohmic contact formation.

Original languageEnglish (US)
Pages (from-to)1322-1327
Number of pages6
JournalSemiconductor Science and Technology
Volume13
Issue number11
DOIs
StatePublished - Nov 1998

Fingerprint

Gallium nitride
Titanium nitride
titanium nitrides
gallium nitrides
Contact resistance
Titanium
electric contacts
Ohmic contacts
titanium
contact resistance
Depth profiling
Photoelectron spectroscopy
Metals
Annealing
X rays
x ray spectroscopy
gallium nitride
titanium nitride
photoelectron spectroscopy
annealing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Titanium and titanium nitride contacts to n-type gallium nitride",
abstract = "Titanium and titanium nitride contacts were fabricated on n-type GaN and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and 900 °C in AR and N2 to observe the effects of annealing environment on ohmic contact formation. Ti contacts annealed in N2 became ohmic after 1 min at 700 °C and reacted at minimum specific contact resistance of 4×10-6 Ω cm2 after 1 min at 800 °C. Ti contacts annealed in Ar required 20-25 min at 700 °C to become ohmic and also reached a minimum specific contact resistance after 1 min at 900 °C. Depth profiles of Ti contacts showed that the presence of TiN at the metal GaN interface was necessary for ohmic contact formation.",
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Titanium and titanium nitride contacts to n-type gallium nitride. / Luther, B. P.; Mohney, Suzanne E.; Jackson, Thomas Nelson.

In: Semiconductor Science and Technology, Vol. 13, No. 11, 11.1998, p. 1322-1327.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Titanium and titanium nitride contacts to n-type gallium nitride

AU - Luther, B. P.

AU - Mohney, Suzanne E.

AU - Jackson, Thomas Nelson

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AB - Titanium and titanium nitride contacts were fabricated on n-type GaN and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and 900 °C in AR and N2 to observe the effects of annealing environment on ohmic contact formation. Ti contacts annealed in N2 became ohmic after 1 min at 700 °C and reacted at minimum specific contact resistance of 4×10-6 Ω cm2 after 1 min at 800 °C. Ti contacts annealed in Ar required 20-25 min at 700 °C to become ohmic and also reached a minimum specific contact resistance after 1 min at 900 °C. Depth profiles of Ti contacts showed that the presence of TiN at the metal GaN interface was necessary for ohmic contact formation.

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