A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - May 2010|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering