Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Conor P. Puls, Neal E. Staley, Jeong Sun Moon, Joshua A. Robinson, Paul M. Campbell, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill, Ying Liu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Original languageEnglish (US)
Article number013103
JournalApplied Physics Letters
Volume99
Issue number1
DOIs
StatePublished - Jul 4 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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