Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

Tsung Ta Ho; Yanfeng Wang; Bangzhi Liu; Sarah Eichfeld; Kok Keong Lew; Suzanne Mohney; Joan Redwing; Theresa Mayer

doi:10.1109/ISDRS.2007.4422515

Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

Tsung Ta Ho, Yanfeng Wang, Bangzhi Liu, Sarah Eichfeld, Kok Keong Lew, Suzanne Mohney, Joan Redwing, Theresa Mayer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422515
State	Published - Dec 1 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422515

Cite this

Ho, T. T., Wang, Y., Liu, B., Eichfeld, S., Lew, K. K., Mohney, S., Redwing, J., & Mayer, T. (2007). Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422515] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422515

@inproceedings{712fefe8a5124ebeac55d2d7b1bf6933,

title = "Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth",

author = "Ho, {Tsung Ta} and Yanfeng Wang and Bangzhi Liu and Sarah Eichfeld and Lew, {Kok Keong} and Suzanne Mohney and Joan Redwing and Theresa Mayer",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422515",

language = "English (US)",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Ho, TT, Wang, Y, Liu, B, Eichfeld, S, Lew, KK, Mohney, S , Redwing, J & Mayer, T 2007, Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422515, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422515

Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth. / Ho, Tsung Ta; Wang, Yanfeng; Liu, Bangzhi et al.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422515 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

AU - Ho, Tsung Ta

AU - Wang, Yanfeng

AU - Liu, Bangzhi

AU - Eichfeld, Sarah

AU - Lew, Kok Keong

AU - Mohney, Suzanne

AU - Redwing, Joan

AU - Mayer, Theresa

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=44949262081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949262081&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422515

DO - 10.1109/ISDRS.2007.4422515

M3 - Conference contribution

AN - SCOPUS:44949262081

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Ho TT, Wang Y, Liu B, Eichfeld S, Lew KK, Mohney S et al. Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth. In 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422515. (2007 International Semiconductor Device Research Symposium, ISDRS). doi: 10.1109/ISDRS.2007.4422515

Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

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Other

All Science Journal Classification (ASJC) codes

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