Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

Tsung Ta Ho, Yanfeng Wang, Bangzhi Liu, Sarah Eichfeld, Kok Keong Lew, Suzanne E. Mohney, Joan Marie Redwing, Theresa Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - Dec 1 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ho, T. T., Wang, Y., Liu, B., Eichfeld, S., Lew, K. K., Mohney, S. E., Redwing, J. M., & Mayer, T. (2007). Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422515] https://doi.org/10.1109/ISDRS.2007.4422515