In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm2/Vs for holes and 175 cm2/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Nov 2010|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering