Top-gated graphene field-effect transistors using graphene on si (111) wafers

J. S. Moon, D. Curtis, S. Bui, T. Marshall, D. Wheeler, I. Valles, S. Kim, E. Wang, X. Weng, Mark Andrew Fanton

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3CSiC(111)/Si(111) substrates. With lateral scaling of the sourcedrain distance to 1 μm in a top-gated layout, the on-state current of 225 μA/μm and peak transconductance of 40\μS/μm were obtained at Vds = 2\V, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 cm2/Vs for holes and 175 cm2/Vs for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.

Original languageEnglish (US)
Article number5565389
Pages (from-to)1193-1195
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
StatePublished - Nov 1 2010

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Field effect transistors
Graphene
Transconductance
Substrates
Demonstrations
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Moon, J. S., Curtis, D., Bui, S., Marshall, T., Wheeler, D., Valles, I., ... Fanton, M. A. (2010). Top-gated graphene field-effect transistors using graphene on si (111) wafers. IEEE Electron Device Letters, 31(11), 1193-1195. [5565389]. https://doi.org/10.1109/LED.2010.2065792
Moon, J. S. ; Curtis, D. ; Bui, S. ; Marshall, T. ; Wheeler, D. ; Valles, I. ; Kim, S. ; Wang, E. ; Weng, X. ; Fanton, Mark Andrew. / Top-gated graphene field-effect transistors using graphene on si (111) wafers. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 11. pp. 1193-1195.
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Moon, JS, Curtis, D, Bui, S, Marshall, T, Wheeler, D, Valles, I, Kim, S, Wang, E, Weng, X & Fanton, MA 2010, 'Top-gated graphene field-effect transistors using graphene on si (111) wafers', IEEE Electron Device Letters, vol. 31, no. 11, 5565389, pp. 1193-1195. https://doi.org/10.1109/LED.2010.2065792

Top-gated graphene field-effect transistors using graphene on si (111) wafers. / Moon, J. S.; Curtis, D.; Bui, S.; Marshall, T.; Wheeler, D.; Valles, I.; Kim, S.; Wang, E.; Weng, X.; Fanton, Mark Andrew.

In: IEEE Electron Device Letters, Vol. 31, No. 11, 5565389, 01.11.2010, p. 1193-1195.

Research output: Contribution to journalArticle

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Moon JS, Curtis D, Bui S, Marshall T, Wheeler D, Valles I et al. Top-gated graphene field-effect transistors using graphene on si (111) wafers. IEEE Electron Device Letters. 2010 Nov 1;31(11):1193-1195. 5565389. https://doi.org/10.1109/LED.2010.2065792