Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Can Li Song, Yi Lin Wang, Ye Ping Jiang, Yi Zhang, Cui Zu Chang, Lili Wang, Ke He, Xi Chen, Jin Feng Jia, Yayu Wang, Zhong Fang, Xi Dai, Xin Cheng Xie, Xiao Liang Qi, Shou Cheng Zhang, Qi Kun Xue, Xucun Ma

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Abstract

Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Original languageEnglish (US)
Article number143118
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
StatePublished - Oct 4 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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