Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

Bin Zhou, Chao Xing Liu, Shun Qing Shen

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.

Original languageEnglish (US)
Article number47010
JournalEPL
Volume79
Issue number4
DOIs
StatePublished - Aug 1 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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