Topological spintronics

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The emerging field of 'topological spintronics' is rooted in the recent realization that narrow band gap semiconductors such as the Bi- and Sb-chalcogenides support two dimensional (2D) helical Dirac fermion surface states characterized by a spin-texture in momentum space [1,2]. Spin- and angle-resolved photoemission spectroscopy [3] has revealed the linear dispersion and the 'spin-momentum locking' of the 2D surface states in these three dimensional (3D) 'topological insulators.' Electrical transport measurements have also shown evidence for spin-momentum locking [4-7], although in devices that contain both bulk and surface conduction. The spin-momentum locking of 2D helical Dirac states lends itself naturally to spintronic device applications and is in particular expected to result in efficient spin-to-charge conversion. In this talk, we present an overview of recent experiments that explore the emergence of 'topological spintronics,' a potential device technology that exploits the helical Dirac spin texture for manipulating the magnetization of a vicinal ferromagnet.

Original languageEnglish (US)
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
StatePublished - Aug 22 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: Jun 19 2016Jun 22 2016

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period6/19/166/22/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Samarth, N. (2016). Topological spintronics. In 74th Annual Device Research Conference, DRC 2016 [7548496] (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548496