Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

Duane Jay McCrory, P. M. Lenahan, D. M. Nminibapiel, D. Veksler, J. T. Ryan, J. P. Campbell

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We observe a gamma-irradiation-induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects, which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g value of 2.001 ± 0.0003. The response increases dramatically with increased gamma irradiation. We tentatively associate this EDMR response with spin-dependent trap-assisted tunneling events at O2- centers coupled to hafnium ions. Although our study cannot fully identify the role of these defects in electronic transport, the study does unambiguously identify changes in transport defects caused by the ionizing radiation on defects involved in electronic transport in RRAM devices. This paper also contributes more broadly to the RRAM field by providing direct, though incomplete, information about atomic scale defects involved in electronic transport in leading RRAM systems.

Original languageEnglish (US)
Pages (from-to)1101-1107
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number5
DOIs
StatePublished - May 2018

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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