Toward a Low-Temperature Route for Epitaxial Integration of BiFeO 3 on Si

Aleksandr V. Plokhikh, Igor A. Karateev, Matthias Falmbigl, Alexander L. Vasiliev, Jason Lapano, Roman Engel-Herbert, Jonathan E. Spanier

Research output: Contribution to journalArticle

Abstract

Epitaxial thin-film growth enables novel functionalities, particularly if significant barriers to integration with existing technologies, scalability and excessive temperature of films, can be addressed. Here, we demonstrate a step toward addressing both challenges by combining hybrid molecular beam epitaxy and atomic layer deposition to epitaxially integrate BiFeO 3 on Si wafers via a SrTiO 3 metamorphic buffer layer. The solid-solid transformation of atomic-layer-deposited amorphous Bi-Fe-O films into epitaxial BiFeO 3 thin films is investigated by in situ annealing utilizing transmission electron microscopy. The amorphous Bi-Fe-O layer undergoes a very complex crystallization process, encompassing phenomena such as reorientation, recrystallization, and grain growth. Our in situ transmission electron microscopy study revealed that a growth front of epitaxial crystallites emerged from the interface with the (001)-oriented SrTiO 3 as temperature increased, whereas randomly oriented BiFeO 3 crystallites formed simultaneously away from the interface. Structural rearrangement and recrystallization of crystallites took place at temperatures below 400 °C. At the final stage, above 400 °C, epitaxial crystallites larger than 60 nm merged into a single crystalline film. Our results demonstrate that this approach permits high-quality epitaxial integration of BiFeO 3 thin films at back-end-of-line-compatible temperatures below 500 °C on metamorphic SrTiO 3 buffer layers on Si.

Original languageEnglish (US)
JournalJournal of Physical Chemistry C
DOIs
StatePublished - Jan 1 2019

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Crystallites
crystallites
routes
Epitaxial films
Buffer layers
Thin films
thin films
buffers
Crystallization
Transmission electron microscopy
Temperature
transmission electron microscopy
temperature
Atomic layer deposition
Film growth
atomic layer epitaxy
Grain growth
Molecular beam epitaxy
retraining
Scalability

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Plokhikh, Aleksandr V. ; Karateev, Igor A. ; Falmbigl, Matthias ; Vasiliev, Alexander L. ; Lapano, Jason ; Engel-Herbert, Roman ; Spanier, Jonathan E. / Toward a Low-Temperature Route for Epitaxial Integration of BiFeO 3 on Si In: Journal of Physical Chemistry C. 2019.
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Toward a Low-Temperature Route for Epitaxial Integration of BiFeO 3 on Si . / Plokhikh, Aleksandr V.; Karateev, Igor A.; Falmbigl, Matthias; Vasiliev, Alexander L.; Lapano, Jason; Engel-Herbert, Roman; Spanier, Jonathan E.

In: Journal of Physical Chemistry C, 01.01.2019.

Research output: Contribution to journalArticle

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