Toward low-power electronics: Tunneling phenomena in transition metal dichalcogenides

Saptarshi Das, Abhijith Prakash, Ramon Salazar, Joerg Appenzeller

Research output: Contribution to journalArticle

116 Citations (Scopus)

Abstract

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform numerical calculations based on Landauer formalism and WKB approximation to explain our experimental findings. Based on our simple model, we discuss the impact of band gap and effective mass on the band-to-band tunneling current and evaluate the performance limits for a set of dichalcogenides in the context of tunneling transistors for low-power applications. Our findings suggest that WTe2 is an excellent choice for tunneling field-effect transistors.

Original languageEnglish (US)
Pages (from-to)1681-1689
Number of pages9
JournalACS nano
Volume8
Issue number2
DOIs
StatePublished - Feb 25 2014

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Low power electronics
Field effect transistors
Transition metals
transition metals
electronics
field effect transistors
Oxides
Transistors
Energy gap
Wentzel-Kramer-Brillouin method
flakes
transistors
formalism
scaling
oxides
approximation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Das, Saptarshi ; Prakash, Abhijith ; Salazar, Ramon ; Appenzeller, Joerg. / Toward low-power electronics : Tunneling phenomena in transition metal dichalcogenides. In: ACS nano. 2014 ; Vol. 8, No. 2. pp. 1681-1689.
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Toward low-power electronics : Tunneling phenomena in transition metal dichalcogenides. / Das, Saptarshi; Prakash, Abhijith; Salazar, Ramon; Appenzeller, Joerg.

In: ACS nano, Vol. 8, No. 2, 25.02.2014, p. 1681-1689.

Research output: Contribution to journalArticle

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