Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain

Joon Seok Kim, Rafia Ahmad, Tribhuwan Pandey, Amritesh Rai, Simin Feng, Jing Yang, Zhong Lin, Mauricio Terrones Maldonado, Sanjay K. Banerjee, Abhishek K. Singh, Deji Akinwande, Jung Fu Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1-x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa-1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.

Original languageEnglish (US)
Article number015008
Journal2D Materials
Volume5
Issue number1
DOIs
StatePublished - Jan 1 2018

Fingerprint

Band structure
Monolayers
engineering
Chemical analysis
Optoelectronic devices
Modulation
Diamond
Energy harvesting
Valence bands
Conduction bands
alignment
Transition metals
Heterojunctions
Diamonds
modulation
Energy gap
anvils
hydrostatics
heterojunctions
conduction bands

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, J. S., Ahmad, R., Pandey, T., Rai, A., Feng, S., Yang, J., ... Lin, J. F. (2018). Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain. 2D Materials, 5(1), [015008]. https://doi.org/10.1088/2053-1583/aa8e71
Kim, Joon Seok ; Ahmad, Rafia ; Pandey, Tribhuwan ; Rai, Amritesh ; Feng, Simin ; Yang, Jing ; Lin, Zhong ; Terrones Maldonado, Mauricio ; Banerjee, Sanjay K. ; Singh, Abhishek K. ; Akinwande, Deji ; Lin, Jung Fu. / Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain. In: 2D Materials. 2018 ; Vol. 5, No. 1.
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abstract = "Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1-x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa-1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.",
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Kim, JS, Ahmad, R, Pandey, T, Rai, A, Feng, S, Yang, J, Lin, Z, Terrones Maldonado, M, Banerjee, SK, Singh, AK, Akinwande, D & Lin, JF 2018, 'Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain', 2D Materials, vol. 5, no. 1, 015008. https://doi.org/10.1088/2053-1583/aa8e71

Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain. / Kim, Joon Seok; Ahmad, Rafia; Pandey, Tribhuwan; Rai, Amritesh; Feng, Simin; Yang, Jing; Lin, Zhong; Terrones Maldonado, Mauricio; Banerjee, Sanjay K.; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung Fu.

In: 2D Materials, Vol. 5, No. 1, 015008, 01.01.2018.

Research output: Contribution to journalArticle

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T1 - Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain

AU - Kim, Joon Seok

AU - Ahmad, Rafia

AU - Pandey, Tribhuwan

AU - Rai, Amritesh

AU - Feng, Simin

AU - Yang, Jing

AU - Lin, Zhong

AU - Terrones Maldonado, Mauricio

AU - Banerjee, Sanjay K.

AU - Singh, Abhishek K.

AU - Akinwande, Deji

AU - Lin, Jung Fu

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1-x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa-1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.

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