Towards the fabrication of ultra-thin SOI on Si (001) using epitaxial oxide and epitaxial semiconductor growth processes

Daniel J. Lichtenwalner, Jennifer M. Hydrick, Viera Vankova, Veena Misra, Jon Paul Maria, Angus I. Kingon

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Silicon on insulator (SOI) substrates will be required to reduce capacitive coupling and other parasitic effects as device scaling continues. ITRS projections point to a future need for SOI buried oxide layers as thin as 10 nm, and Si channel thickness potentially as low as 5 nm for fully-depleted ultra-thin-body devices. For such thin layers, conventional SOI fabrication processes become increasingly difficult. Progress towards fabricating ultra-thin SOI on Si(001) through an all-growth approach is presented. All steps are performed sequentially in situ, with no wet chemical processing. Starting with a Si wafer as large as 8", our approach is to: 1) deposit a thin commensurate epitaxial oxide layer such as Ca1-xSr xTiO3; 2) oxidize to grow an interface SiO2: layer ('floating' the epitaxial oxide) for stress relief and lowering of the dielectric constant; and 3) deposit epitaxial Si or Si1-xGe x to complete the fabrication process. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)449-460
Number of pages12
JournalECS Transactions
Volume3
Issue number3
DOIs
StatePublished - Dec 1 2006
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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