Abstract
The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.
| Original language | English (US) |
|---|---|
| Article number | 47LT02 |
| Journal | Nanotechnology |
| Volume | 29 |
| Issue number | 47 |
| DOIs | |
| State | Published - Sep 28 2018 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
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Transformation of 2D group-III selenides to ultra-thin nitrides : Enabling epitaxy on amorphous substrates. / Briggs, Natalie; Preciado, Maria Isolina; Lu, Yanfu; Wang, Ke; Leach, Jacob; Li, Xufan; Xiao, Kai; Subramanian, Shruti; Wang, Baoming; Haque, Md Amanul; Sinnott, Susan B.; Robinson, Joshua Alexander.
In: Nanotechnology, Vol. 29, No. 47, 47LT02, 28.09.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Transformation of 2D group-III selenides to ultra-thin nitrides
T2 - Enabling epitaxy on amorphous substrates
AU - Briggs, Natalie
AU - Preciado, Maria Isolina
AU - Lu, Yanfu
AU - Wang, Ke
AU - Leach, Jacob
AU - Li, Xufan
AU - Xiao, Kai
AU - Subramanian, Shruti
AU - Wang, Baoming
AU - Haque, Md Amanul
AU - Sinnott, Susan B.
AU - Robinson, Joshua Alexander
PY - 2018/9/28
Y1 - 2018/9/28
N2 - The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.
AB - The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.
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U2 - 10.1088/1361-6528/aae0bb
DO - 10.1088/1361-6528/aae0bb
M3 - Article
VL - 29
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 47
M1 - 47LT02
ER -