@article{c40e2b55884e4e70b849145982db07a8,
title = "Transformation of 2D group-III selenides to ultra-thin nitrides: Enabling epitaxy on amorphous substrates",
abstract = "The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.",
author = "Natalie Briggs and Preciado, {Maria Isolina} and Yanfu Lu and Ke Wang and Jacob Leach and Xufan Li and Kai Xiao and Shruti Subramanian and Baoming Wang and Aman Haque and Susan Sinnott and Robinson, {Joshua A.}",
note = "Funding Information: This research was supported by the Army Research Office (Grant # W911NF1510488) and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. JAR and SS acknowledge NSF support through the CAREER Grant 1453924. Synthesis of the GaSe precursor and some mono/few-layer GaSe was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Funding Information: This research was supported by the Army Research Office (Grant # W911NF1510488) and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. JAR and SS acknowledge NSF support through the CAREER Grant 1453924. Synthesis of the GaSe precursor and some mono/few-layer GaSe was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Special thanks to Jeffrey R Shallenberger and the Penn State Materials Characterization Laboratory for contributing synthetic x-ray photoelectron spectra. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",
year = "2018",
month = sep,
day = "28",
doi = "10.1088/1361-6528/aae0bb",
language = "English (US)",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "47",
}