Transformation of 2D group-III selenides to ultra-thin nitrides

Enabling epitaxy on amorphous substrates

Natalie Briggs, Maria Isolina Preciado, Yanfu Lu, Ke Wang, Jacob Leach, Xufan Li, Kai Xiao, Shruti Subramanian, Baoming Wang, Md Amanul Haque, Susan B. Sinnott, Joshua Alexander Robinson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

Original languageEnglish (US)
Article number47LT02
JournalNanotechnology
Volume29
Issue number47
DOIs
StatePublished - Sep 28 2018

Fingerprint

Gallium nitride
Epitaxial growth
Nitrides
Substrates
Indium
Nitridation
Gallium
Chalcogens
Chalcogenides
Boron nitride
Ammonia
Silicon Dioxide
Seed
Nitrogen
Silica
gallium nitride
Annealing

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Briggs, Natalie ; Preciado, Maria Isolina ; Lu, Yanfu ; Wang, Ke ; Leach, Jacob ; Li, Xufan ; Xiao, Kai ; Subramanian, Shruti ; Wang, Baoming ; Haque, Md Amanul ; Sinnott, Susan B. ; Robinson, Joshua Alexander. / Transformation of 2D group-III selenides to ultra-thin nitrides : Enabling epitaxy on amorphous substrates. In: Nanotechnology. 2018 ; Vol. 29, No. 47.
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Transformation of 2D group-III selenides to ultra-thin nitrides : Enabling epitaxy on amorphous substrates. / Briggs, Natalie; Preciado, Maria Isolina; Lu, Yanfu; Wang, Ke; Leach, Jacob; Li, Xufan; Xiao, Kai; Subramanian, Shruti; Wang, Baoming; Haque, Md Amanul; Sinnott, Susan B.; Robinson, Joshua Alexander.

In: Nanotechnology, Vol. 29, No. 47, 47LT02, 28.09.2018.

Research output: Contribution to journalArticle

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AU - Briggs, Natalie

AU - Preciado, Maria Isolina

AU - Lu, Yanfu

AU - Wang, Ke

AU - Leach, Jacob

AU - Li, Xufan

AU - Xiao, Kai

AU - Subramanian, Shruti

AU - Wang, Baoming

AU - Haque, Md Amanul

AU - Sinnott, Susan B.

AU - Robinson, Joshua Alexander

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