Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

Joerg Appenzeller, Feng Zhang, Saptarshi Das, Joachim Knoch

Research output: Chapter in Book/Report/Conference proceedingChapter

17 Citations (Scopus)
Original languageEnglish (US)
Title of host publication2D Materials for Nanoelectronics
PublisherCRC Press
Pages207-240
Number of pages34
ISBN (Electronic)9781498704182
ISBN (Print)9781498704175
StatePublished - May 5 2016

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Transition metals
Transistors
transistors
transition metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

Appenzeller, J., Zhang, F., Das, S., & Knoch, J. (2016). Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison. In 2D Materials for Nanoelectronics (pp. 207-240). CRC Press.
Appenzeller, Joerg ; Zhang, Feng ; Das, Saptarshi ; Knoch, Joachim. / Transition metal dichalcogenide schottky barrier transistors : A device analysis and material comparison. 2D Materials for Nanoelectronics. CRC Press, 2016. pp. 207-240
@inbook{0a72f56ac4394b5baba4819881bbfdc0,
title = "Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison",
author = "Joerg Appenzeller and Feng Zhang and Saptarshi Das and Joachim Knoch",
year = "2016",
month = "5",
day = "5",
language = "English (US)",
isbn = "9781498704175",
pages = "207--240",
booktitle = "2D Materials for Nanoelectronics",
publisher = "CRC Press",

}

Appenzeller, J, Zhang, F, Das, S & Knoch, J 2016, Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison. in 2D Materials for Nanoelectronics. CRC Press, pp. 207-240.

Transition metal dichalcogenide schottky barrier transistors : A device analysis and material comparison. / Appenzeller, Joerg; Zhang, Feng; Das, Saptarshi; Knoch, Joachim.

2D Materials for Nanoelectronics. CRC Press, 2016. p. 207-240.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Transition metal dichalcogenide schottky barrier transistors

T2 - A device analysis and material comparison

AU - Appenzeller, Joerg

AU - Zhang, Feng

AU - Das, Saptarshi

AU - Knoch, Joachim

PY - 2016/5/5

Y1 - 2016/5/5

UR - http://www.scopus.com/inward/record.url?scp=84966848575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84966848575&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:84966848575

SN - 9781498704175

SP - 207

EP - 240

BT - 2D Materials for Nanoelectronics

PB - CRC Press

ER -

Appenzeller J, Zhang F, Das S, Knoch J. Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison. In 2D Materials for Nanoelectronics. CRC Press. 2016. p. 207-240