Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride

Jingxi Sun, Joan Marie Redwing, T. F. Kuech

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Computational fluid dynamics (CFD) based reactor modeling, combined with gas phase kinetics studies, was used to determine the transport and reaction behaviors within a high performance vertical GaN MOVPE reactor. The typical thermal fluid behaviors have been initially identified, which are believed to be closely correlated to the growth of device quality of GaN-based materials. The growth chemistry, under these typical fluid conditions, was studied by increasing the complexity of growth chemistry model in a step-wise fashion. The high gas flow rate typically employed in GaN MOVPE results in a very thin high-temperature flow sheet above the growth front. Within this thin high-temperature flow sheet, a stratified chemical structure is formed as a result of the unique thermal fluid environment. This stratified structure is closely related to the transport and reaction behaviors during GaN MOVPE processes.

Original languageEnglish (US)
Pages (from-to)693-698
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
StatePublished - Nov 1 1999
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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