Transport characteristics of ferromagnetic single -electron transistors with non-collinear magnetizations

J. Wiśniewska, M. Kowalik, J. Barnaś

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Abstract

Theoretical analysis of spin-polarized transport through a ferromagnetic single-electron transistor (FM SET) has been carried out in the sequential tunnelling regime. Two external electrodes and the central part (island) of the device are assumed to be ferromagnetic, with the corresponding magnetizations being generally non-collinear. The transport properties of the FM SET are analysed within the master equation approach with the respective transition rates determined from the Fermi golden rule. It is assumed that spin relaxation processes on the island are sufficiently fast to neglect spin accumulation. It is shown that electric current and tunnel magnetoresistance strongly depend on the magnetic configuration of the device. Transport characteristics of symmetrical and asymmetrical structures have been calculated as a function of bias and gate voltages.

Original languageEnglish (US)
Pages (from-to)761-767
Number of pages7
JournalMaterials Science- Poland
Volume24
Issue number3
Publication statusPublished - Oct 17 2006

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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