Transport coefficients and thermoelectric figure of merit of n-Hg 1-xCdxTe

Jorge Osvaldo Sofo, G. D. Mahan, J. Baars

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The conductivity, Hall coefficient, and thermopower of Hg 1-xCdxTe (MCT) are calculated for 0<x<0.3 at temperatures below 400 K and donor doping lower than 1019 cm -3. The results are obtained by solving the Boltzmann equation with the iteration method, including scattering of the carriers by ionized impurities, optical and acoustic phonons, and alloy potential. The agreement between the calculation and a large amount of compiled experimental data is excellent for bulk samples and thick films grown by molecular-beam epitaxy. Using tabulated data for the thermal conductivity the thermoelectric figure of merit Z is calculated, and in the most favorable conditions of doping and composition ZT is less than 0.33 at T=300 K. The potential for increasing the ZT of MCT is discussed.

Original languageEnglish (US)
Pages (from-to)2249-2254
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number4
DOIs
StatePublished - Dec 1 1994

Fingerprint

figure of merit
transport properties
thick films
iteration
Hall effect
phonons
molecular beam epitaxy
thermal conductivity
impurities
conductivity
acoustics
scattering
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{0c45f0017c154b9fb63c7359ddecb209,
title = "Transport coefficients and thermoelectric figure of merit of n-Hg 1-xCdxTe",
abstract = "The conductivity, Hall coefficient, and thermopower of Hg 1-xCdxTe (MCT) are calculated for 019 cm -3. The results are obtained by solving the Boltzmann equation with the iteration method, including scattering of the carriers by ionized impurities, optical and acoustic phonons, and alloy potential. The agreement between the calculation and a large amount of compiled experimental data is excellent for bulk samples and thick films grown by molecular-beam epitaxy. Using tabulated data for the thermal conductivity the thermoelectric figure of merit Z is calculated, and in the most favorable conditions of doping and composition ZT is less than 0.33 at T=300 K. The potential for increasing the ZT of MCT is discussed.",
author = "Sofo, {Jorge Osvaldo} and Mahan, {G. D.} and J. Baars",
year = "1994",
month = "12",
day = "1",
doi = "10.1063/1.357643",
language = "English (US)",
volume = "76",
pages = "2249--2254",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Transport coefficients and thermoelectric figure of merit of n-Hg 1-xCdxTe. / Sofo, Jorge Osvaldo; Mahan, G. D.; Baars, J.

In: Journal of Applied Physics, Vol. 76, No. 4, 01.12.1994, p. 2249-2254.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Transport coefficients and thermoelectric figure of merit of n-Hg 1-xCdxTe

AU - Sofo, Jorge Osvaldo

AU - Mahan, G. D.

AU - Baars, J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The conductivity, Hall coefficient, and thermopower of Hg 1-xCdxTe (MCT) are calculated for 019 cm -3. The results are obtained by solving the Boltzmann equation with the iteration method, including scattering of the carriers by ionized impurities, optical and acoustic phonons, and alloy potential. The agreement between the calculation and a large amount of compiled experimental data is excellent for bulk samples and thick films grown by molecular-beam epitaxy. Using tabulated data for the thermal conductivity the thermoelectric figure of merit Z is calculated, and in the most favorable conditions of doping and composition ZT is less than 0.33 at T=300 K. The potential for increasing the ZT of MCT is discussed.

AB - The conductivity, Hall coefficient, and thermopower of Hg 1-xCdxTe (MCT) are calculated for 019 cm -3. The results are obtained by solving the Boltzmann equation with the iteration method, including scattering of the carriers by ionized impurities, optical and acoustic phonons, and alloy potential. The agreement between the calculation and a large amount of compiled experimental data is excellent for bulk samples and thick films grown by molecular-beam epitaxy. Using tabulated data for the thermal conductivity the thermoelectric figure of merit Z is calculated, and in the most favorable conditions of doping and composition ZT is less than 0.33 at T=300 K. The potential for increasing the ZT of MCT is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0005094161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005094161&partnerID=8YFLogxK

U2 - 10.1063/1.357643

DO - 10.1063/1.357643

M3 - Article

AN - SCOPUS:0005094161

VL - 76

SP - 2249

EP - 2254

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -