Transport coefficients of AlGaN/GaN heterostructures

M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock, D. B. Mast, Joan Marie Redwing, M. A. Tischler, J. S. Flynn

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τcq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

Original languageEnglish (US)
Pages (from-to)210-214
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number4
DOIs
StatePublished - Jan 1 1998

Fingerprint

Heterojunctions
transport properties
Scattering
scattering
Two dimensional electron gas
Nitrides
nitrides
electron gas
Impurities
impurities
aluminum gallium nitride
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ahoujja, M., Mitchel, W. C., Elhamri, S., Newrock, R. S., Mast, D. B., Redwing, J. M., ... Flynn, J. S. (1998). Transport coefficients of AlGaN/GaN heterostructures. Journal of Electronic Materials, 27(4), 210-214. https://doi.org/10.1007/s11664-998-0389-4
Ahoujja, M. ; Mitchel, W. C. ; Elhamri, S. ; Newrock, R. S. ; Mast, D. B. ; Redwing, Joan Marie ; Tischler, M. A. ; Flynn, J. S. / Transport coefficients of AlGaN/GaN heterostructures. In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 4. pp. 210-214.
@article{8bc6ff9f798440f4b04385f3b12d2511,
title = "Transport coefficients of AlGaN/GaN heterostructures",
abstract = "We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.",
author = "M. Ahoujja and Mitchel, {W. C.} and S. Elhamri and Newrock, {R. S.} and Mast, {D. B.} and Redwing, {Joan Marie} and Tischler, {M. A.} and Flynn, {J. S.}",
year = "1998",
month = "1",
day = "1",
doi = "10.1007/s11664-998-0389-4",
language = "English (US)",
volume = "27",
pages = "210--214",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

Ahoujja, M, Mitchel, WC, Elhamri, S, Newrock, RS, Mast, DB, Redwing, JM, Tischler, MA & Flynn, JS 1998, 'Transport coefficients of AlGaN/GaN heterostructures', Journal of Electronic Materials, vol. 27, no. 4, pp. 210-214. https://doi.org/10.1007/s11664-998-0389-4

Transport coefficients of AlGaN/GaN heterostructures. / Ahoujja, M.; Mitchel, W. C.; Elhamri, S.; Newrock, R. S.; Mast, D. B.; Redwing, Joan Marie; Tischler, M. A.; Flynn, J. S.

In: Journal of Electronic Materials, Vol. 27, No. 4, 01.01.1998, p. 210-214.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Transport coefficients of AlGaN/GaN heterostructures

AU - Ahoujja, M.

AU - Mitchel, W. C.

AU - Elhamri, S.

AU - Newrock, R. S.

AU - Mast, D. B.

AU - Redwing, Joan Marie

AU - Tischler, M. A.

AU - Flynn, J. S.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

AB - We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τc/τq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

UR - http://www.scopus.com/inward/record.url?scp=3343004068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3343004068&partnerID=8YFLogxK

U2 - 10.1007/s11664-998-0389-4

DO - 10.1007/s11664-998-0389-4

M3 - Article

AN - SCOPUS:3343004068

VL - 27

SP - 210

EP - 214

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -

Ahoujja M, Mitchel WC, Elhamri S, Newrock RS, Mast DB, Redwing JM et al. Transport coefficients of AlGaN/GaN heterostructures. Journal of Electronic Materials. 1998 Jan 1;27(4):210-214. https://doi.org/10.1007/s11664-998-0389-4