Transport coefficients of AlGaN/GaN heterostructures

M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock, D. B. Mast, J. M. Redwing, M. A. Tischler, J. S. Flynn

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have experimentally determined the effective mass (m*) of GaN, the classical (τc), and quantum (τq) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τcq, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

Original languageEnglish (US)
Pages (from-to)210-214
Number of pages5
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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