Transport properties of Bi2(Se1−xTex)3 thin films grown by molecular beam epitaxy

Yong Wang; Theresa P. Ginley; Chiyu Zhang; Stephanie Law

doi:10.1116/1.4976622

Transport properties of Bi₂(Se_1−xTe_x)₃ thin films grown by molecular beam epitaxy

Yong Wang, Theresa P. Ginley, Chiyu Zhang, Stephanie Law

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, the authors report on the growth of the topological insulator alloy Bi₂(Se_1−xTe_x)₃ by molecular beam epitaxy. A variety of flux ratios and substrate temperatures are used to control the alloy composition. A significant reduction in selenium flux is required to obtain high tellurium-content films. Room-temperature Hall measurements are used to determine the optimal growth window and film composition to obtain low carrier density and high mobility films. Results of the transport properties indicate that all films containing tellurium exhibit worse transport properties than pure Bi₂Se₃. This is attributed to a defective interface between the film and the substrate acting as the dominant source of carriers, rather than bulk defects.

Original language	English (US)
Article number	02B106
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	2
DOIs	https://doi.org/10.1116/1.4976622
State	Published - Mar 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4976622

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@article{0c727aafcbdf41a681600b54f4cd40f5,

title = "Transport properties of Bi2(Se1−xTex)3 thin films grown by molecular beam epitaxy",

abstract = "In this article, the authors report on the growth of the topological insulator alloy Bi2(Se1−xTex)3 by molecular beam epitaxy. A variety of flux ratios and substrate temperatures are used to control the alloy composition. A significant reduction in selenium flux is required to obtain high tellurium-content films. Room-temperature Hall measurements are used to determine the optimal growth window and film composition to obtain low carrier density and high mobility films. Results of the transport properties indicate that all films containing tellurium exhibit worse transport properties than pure Bi2Se3. This is attributed to a defective interface between the film and the substrate acting as the dominant source of carriers, rather than bulk defects.",

author = "Yong Wang and Ginley, {Theresa P.} and Chiyu Zhang and Stephanie Law",

note = "Funding Information: Y.W. and S.L. acknowledge funding from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award No. DE-SC0016380. T.P.G. acknowledges funding from the University of Delaware Research Foundation, Grant No. 15A00862. C.Z. was partially supported by the Undergraduate Research Program at the University of Delaware. Publisher Copyright: {\textcopyright} 2017 American Vacuum Society.",

year = "2017",

month = mar,

day = "1",

doi = "10.1116/1.4976622",

language = "English (US)",

volume = "35",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Transport properties of Bi2(Se1−xTex)3 thin films grown by molecular beam epitaxy

AU - Wang, Yong

AU - Ginley, Theresa P.

AU - Zhang, Chiyu

AU - Law, Stephanie

N1 - Funding Information: Y.W. and S.L. acknowledge funding from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award No. DE-SC0016380. T.P.G. acknowledges funding from the University of Delaware Research Foundation, Grant No. 15A00862. C.Z. was partially supported by the Undergraduate Research Program at the University of Delaware. Publisher Copyright: © 2017 American Vacuum Society.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - In this article, the authors report on the growth of the topological insulator alloy Bi2(Se1−xTex)3 by molecular beam epitaxy. A variety of flux ratios and substrate temperatures are used to control the alloy composition. A significant reduction in selenium flux is required to obtain high tellurium-content films. Room-temperature Hall measurements are used to determine the optimal growth window and film composition to obtain low carrier density and high mobility films. Results of the transport properties indicate that all films containing tellurium exhibit worse transport properties than pure Bi2Se3. This is attributed to a defective interface between the film and the substrate acting as the dominant source of carriers, rather than bulk defects.

AB - In this article, the authors report on the growth of the topological insulator alloy Bi2(Se1−xTex)3 by molecular beam epitaxy. A variety of flux ratios and substrate temperatures are used to control the alloy composition. A significant reduction in selenium flux is required to obtain high tellurium-content films. Room-temperature Hall measurements are used to determine the optimal growth window and film composition to obtain low carrier density and high mobility films. Results of the transport properties indicate that all films containing tellurium exhibit worse transport properties than pure Bi2Se3. This is attributed to a defective interface between the film and the substrate acting as the dominant source of carriers, rather than bulk defects.

UR - http://www.scopus.com/inward/record.url?scp=85013912567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013912567&partnerID=8YFLogxK

U2 - 10.1116/1.4976622

DO - 10.1116/1.4976622

M3 - Article

AN - SCOPUS:85013912567

SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 2

M1 - 02B106

ER -

Transport properties of Bi₂(Se_1−xTe_x)₃ thin films grown by molecular beam epitaxy

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