Transport Property Measurements in Doped Bi2Te3 Single Crystals Obtained via Zone Melting Method

Bhakti Jariwala, Dimple Shah, N. M. Ravindra

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Abstract

Single crystals of Se- and Fe-doped Bi2Te3 have been synthesized via the zone melting method. Energy-dispersive x-ray and x-ray powder diffraction analyses have been carried out to identify the constituent elements and determine the lattice parameters of the grown crystals. Surface topological features of the as-grown single crystals have been studied. The transport properties of doped stoichiometric Bi2Te3 single crystals have been studied by measuring the thermoelectric power and electrical conductivity in the temperature range from 303 K to 473 K. The thermoelectric power, S, effective mass, scattering parameter, and Fermi energy have been calculated from thermoelectric power measurements. The temperature dependence of the electrical conductivity, σ, shows that the dopants in the crystals are thermally activated. All the crystals exhibit semiconducting behavior as confirmed by the temperature dependence of σ and S. The effective mass of electrons and the effective density of states have been determined and are reported for Bi2Te3−xSex (0 ≤ x ≤ 0.3) and Bi2−yFeyTe3 (0 ≤ y ≤ 0.3).

Original languageEnglish (US)
Pages (from-to)1509-1516
Number of pages8
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - Jun 1 2015

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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