Abstract
The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 445-449 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 229 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jul 2 2001 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films. / Yoshimura, Takeshi; Trolier-McKinstry, Susan E.
In: Journal of Crystal Growth, Vol. 229, No. 1, 02.07.2001, p. 445-449.Research output: Contribution to journal › Article
TY - JOUR
T1 - Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films
AU - Yoshimura, Takeshi
AU - Trolier-McKinstry, Susan E.
PY - 2001/7/2
Y1 - 2001/7/2
N2 - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.
AB - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.
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U2 - 10.1016/S0022-0248(01)01200-3
DO - 10.1016/S0022-0248(01)01200-3
M3 - Article
VL - 229
SP - 445
EP - 449
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -