Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films

Takeshi Yoshimura, Susan Trolier-McKinstry

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Abstract

The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

Original languageEnglish (US)
Pages (from-to)445-449
Number of pages5
JournalJournal of Crystal Growth
Volume229
Issue number1
DOIs
StatePublished - Jul 2 2001

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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