Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films

Takeshi Yoshimura; Susan Trolier-McKinstry

doi:10.1016/S0022-0248(01)01200-3

Transverse piezoelectric properties of epitaxial Pb(Yb_1/2Nb_1/2)O₃-PbTiO₃ (50/50) films

Takeshi Yoshimura, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The transverse piezoelectric properties of (1-x)Pb(Yb_1/2Nb_1/2)O_3-xPbTiO₃ (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO₃/(00 1)LaAlO₃ (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO₃ bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm². The e₃₁ coefficient and the aging rate were strongly dependent on the poling direction. The maximum e₃₁ coefficient was -11.0C/m². The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

Original language	English (US)
Pages (from-to)	445-449
Number of pages	5
Journal	Journal of Crystal Growth
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01200-3
State	Published - Jul 2 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{04008cac12f64648aff57c0b4ff717c0,

title = "Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films",

abstract = "The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.",

author = "Takeshi Yoshimura and Susan Trolier-McKinstry",

year = "2001",

month = jul,

day = "2",

doi = "10.1016/S0022-0248(01)01200-3",

language = "English (US)",

volume = "229",

pages = "445--449",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) films

AU - Yoshimura, Takeshi

AU - Trolier-McKinstry, Susan

PY - 2001/7/2

Y1 - 2001/7/2

N2 - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

AB - The transverse piezoelectric properties of (1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3 (PYbN-PT, x = 0.5) epitaxial films grown on (00 1)SrRuO3/(00 1)LaAlO3 (indices given for the pseudocubic unit cell) were investigated by the wafer flexure technique. PYbN-PT films and SrRuO3 bottom electrodes were deposited by pulsed laser deposition. At a deposition pressure of 400 mTorr, (001) PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (40-100nm/min) and temperatures (620-660°C). The remanent polarization of the film was as high as 30 μC/cm2. The e31 coefficient and the aging rate were strongly dependent on the poling direction. The maximum e31 coefficient was -11.0C/m2. The minimum aging rate of the piezoelectric coefficients for the films was 2% per decade.

UR - http://www.scopus.com/inward/record.url?scp=0035398192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035398192&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01200-3

DO - 10.1016/S0022-0248(01)01200-3

M3 - Article

AN - SCOPUS:0035398192

VL - 229

SP - 445

EP - 449

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -