Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs

S. G. Khalil, L. Ray, M. Chen, R. Chu, D. Zehnder, A. Garrido, M. Munsi, S. Kim, B. Hughes, K. Boutros, R. J. Kaplar, J. Dickerson, S. Dasgupta, S. Atcitty, M. J. Marinella

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper reports on trap-related shifts of the transfer curve and threshold voltage of power AlGaN/GaN HEMTs under switched bias operating life and reverse and forward DC bias stress. Opposite polarity threshold voltage shifts at room temperature under operating life and reverse bias stress conditions can be explained by means of drain current transient measurements under reverse bias stress conditions. A proposed model to explain the trapping/de-trapping behavior under different stress conditions is described and highlights the critical role of the electric field. Experimental evidence of the importance of the role of the electric field is seen in reduced parametric shift by improving the field plate design.

Original languageEnglish (US)
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesCD.4.1-CD.4.9
ISBN (Print)9781479933167
DOIs
StatePublished - Jan 1 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period6/1/146/5/14

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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