@inproceedings{fec643409c214b3d9ea8d3011e15508e,
title = "Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs",
abstract = "This paper reports on trap-related shifts of the transfer curve and threshold voltage of power AlGaN/GaN HEMTs under switched bias operating life and reverse and forward DC bias stress. Opposite polarity threshold voltage shifts at room temperature under operating life and reverse bias stress conditions can be explained by means of drain current transient measurements under reverse bias stress conditions. A proposed model to explain the trapping/de-trapping behavior under different stress conditions is described and highlights the critical role of the electric field. Experimental evidence of the importance of the role of the electric field is seen in reduced parametric shift by improving the field plate design.",
author = "Khalil, {S. G.} and L. Ray and M. Chen and R. Chu and D. Zehnder and A. Garrido and M. Munsi and S. Kim and B. Hughes and K. Boutros and Kaplar, {R. J.} and J. Dickerson and S. Dasgupta and S. Atcitty and Marinella, {M. J.}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IRPS.2014.6861127",
language = "English (US)",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "CD.4.1--CD.4.9",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
address = "United States",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}