Tri-layer a-Si: H integrated circuits on polymeric substrates

Daniel B. Thomasson, Mathias Bonse, Jiunn Ru Huang, Christopher R. Wronski, Thomas Nelson Jackson

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Using a thermal mountant, we have fabricated hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and integrated circuits on both colored and nearly colorless polyimide substrates with performance very similar to devices fabricated on glass substrates. Delay and power dissipation were measured with ring oscillators; minimum stage delay was less than 10 μsec, and minimum power dissipation was less than 10 μW per stage. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

Original languageEnglish (US)
Pages (from-to)253-256
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1998

Fingerprint

integrated circuits
Integrated circuits
Energy dissipation
Substrates
dissipation
transistor circuits
Thin film transistors
Amorphous silicon
polyimides
Polyimides
amorphous silicon
oscillators
engineering
Glass
Networks (circuits)
glass
rings
thin films
Processing
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Thomasson, Daniel B. ; Bonse, Mathias ; Huang, Jiunn Ru ; Wronski, Christopher R. ; Jackson, Thomas Nelson. / Tri-layer a-Si : H integrated circuits on polymeric substrates. In: Technical Digest - International Electron Devices Meeting. 1998 ; pp. 253-256.
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Tri-layer a-Si : H integrated circuits on polymeric substrates. / Thomasson, Daniel B.; Bonse, Mathias; Huang, Jiunn Ru; Wronski, Christopher R.; Jackson, Thomas Nelson.

In: Technical Digest - International Electron Devices Meeting, 1998, p. 253-256.

Research output: Contribution to journalArticle

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T2 - H integrated circuits on polymeric substrates

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AU - Bonse, Mathias

AU - Huang, Jiunn Ru

AU - Wronski, Christopher R.

AU - Jackson, Thomas Nelson

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AB - Using a thermal mountant, we have fabricated hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and integrated circuits on both colored and nearly colorless polyimide substrates with performance very similar to devices fabricated on glass substrates. Delay and power dissipation were measured with ring oscillators; minimum stage delay was less than 10 μsec, and minimum power dissipation was less than 10 μW per stage. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

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