Tri-layer a-Si: H integrated circuits on polymeric substrates

Daniel B. Thomasson, Mathias Bonse, Jiunn Ru Huang, Christopher R. Wronski, Thomas Nelson Jackson

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Using a thermal mountant, we have fabricated hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and integrated circuits on both colored and nearly colorless polyimide substrates with performance very similar to devices fabricated on glass substrates. Delay and power dissipation were measured with ring oscillators; minimum stage delay was less than 10 μsec, and minimum power dissipation was less than 10 μW per stage. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

Original languageEnglish (US)
Pages (from-to)253-256
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Tri-layer a-Si: H integrated circuits on polymeric substrates'. Together they form a unique fingerprint.

Cite this