Tri-layer a-Si: H TFTs on polymeric substrates

D. B. Thomasson, M. Bonse, R. J. Koval, J. R. Huang, C. R. Wronski, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Using a mountain technique, hydrogenated amorphous silicon thin film transistors (a-Si:H) were fabricated on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages126-127
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period6/22/986/24/98

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Thomasson, D. B., Bonse, M., Koval, R. J., Huang, J. R., Wronski, C. R., & Jackson, T. N. (1998). Tri-layer a-Si: H TFTs on polymeric substrates. In Annual Device Research Conference Digest (pp. 126-127). IEEE.