Trilayer ZnO thin-film transistors with in situ Al2O3 passivation

Yuanyuan V. Li, Kaige G. Sun, Jose Israel Ramirez, Thomas N. Jackson

Research output: Contribution to journalArticle

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Abstract

In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al2O3 passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al 2O3ZnO-Al2O3 trilayer deposited in one deposition run at 200 °C that provides protection for the active layer back surface with no extra passivation step. Compared with Al2O 3 passivated, nontrilayer ZnO TFTs, these trilayer devices have similar field effect mobility, but more positive turn-on voltage and improved bias stability. Seven-stage trilayer ZnO TFT ring oscillators operated at 3.5 MHz at a supply voltage of 17 V, corresponding to a propagation delay of 27~ns\stage.

Original languageEnglish (US)
Article number6627969
Pages (from-to)1400-1402
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number11
DOIs
StatePublished - Nov 13 2013

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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