TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

Fu Kuo Hsueh, Hsiao Yun Chiu, Chang Hong Shen, Jia Min Shieh, Ying Tsan Tang, Chih Chao Yang, Hsiu Chih Chen, Wen Hsien Huang, Bo Yuan Chen, Kun Ming Chen, Guo Wei Huang, Wei Hao Chen, Kuo Hsiang Hsu, Srivatsa Rangachar Srinivasa, Nicholas Jao, Albert Lee, Hochul Lee, Vijaykrishnan Narayanan, Kang Lung Wang, Meng Fan ChangWen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations


This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D CIM SRAM cell is able to compute NAND/AND, OR/NOR and XOR/XNOR operations within a single memory cycle. We fabricated stackable multi-fin single-grained Si FinFET using low thermal-budget CO2 far-infrared laser annealing (FIR-LA) for activation and self-aligned silicide. The proposed device achieved high Ion (320 μA/μm (n-FET) and 275 μA/μm (p-FET)) and high Ion/Ioff (>107). The proposed scheme enables the fabrication of energy and area efficient circuits for cost-aware intelligent IoT devices. For proposed 9T CIM SRAM cell, the monolithic 3D device reduces area overhead by 51%, compared to the 2D version, thanks to the stacking of three additional transistors above the 6T SRAM cell.

Original languageEnglish (US)
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538635599
StatePublished - Jan 23 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'TSV-free FinFET-based Monolithic 3D<sup>+</sup>-IC with computing-in-memory SRAM cell for intelligent IoT devices'. Together they form a unique fingerprint.

Cite this