Tunable anomalous Hall effect in a nonferromagnetic system

John Cumings, L. S. Moore, H. T. Chou, K. C. Ku, G. Xiang, S. A. Crooker, N. Samarth, D. Goldhaber-Gordon

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.

Original languageEnglish (US)
Article number196404
JournalPhysical Review Letters
Volume96
Issue number19
DOIs
StatePublished - May 26 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Tunable anomalous Hall effect in a nonferromagnetic system'. Together they form a unique fingerprint.

  • Cite this

    Cumings, J., Moore, L. S., Chou, H. T., Ku, K. C., Xiang, G., Crooker, S. A., Samarth, N., & Goldhaber-Gordon, D. (2006). Tunable anomalous Hall effect in a nonferromagnetic system. Physical Review Letters, 96(19), [196404]. https://doi.org/10.1103/PhysRevLett.96.196404