Tuning Phase Transitions in 1T-TaS2 via the Substrate

Rui Zhao, Yi Wang, Donna Deng, Xuan Luo, Wen Jian Lu, Yu Ping Sun, Zi Kui Liu, Long Qing Chen, Joshua Robinson

Research output: Contribution to journalArticle

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Abstract

Phase transitions in 2D materials can lead to massive changes in electronic properties that enable novel electronic devices. Tantalum disulfide (TaS2), specifically the "1T" phase (1T-TaS2), exhibits a phase transition based on the formation of commensurate charge density waves (CCDW) at 180 K. In this work, we investigate the impact of substrate choice on the phase transitions in ultrathin 1T-TaS2. Doping and charge transfer from the substrate has little impact on CDW phase transitions. On the contrary, we demonstrated that substrate surface roughness is a primary extrinsic factor in CCDW transition temperature and hysteresis, where higher roughness leads to smaller transition hysteresis. Such roughness can be simulated via surface texturing of SiO2/Si substrates, which controllably and reproducibly induces periodic strain in the 1T-TaS2 and thereby enables the potential for engineering CDW phase transitions.

Original languageEnglish (US)
Pages (from-to)3471-3477
Number of pages7
JournalNano letters
Volume17
Issue number6
DOIs
StatePublished - Jun 14 2017

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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