Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

Kehao Zhang, Brian M. Bersch, Jaydeep Joshi, Rafik Addou, Christopher R. Cormier, Chenxi Zhang, Ke Xu, Natalie C. Briggs, Ke Wang, Shruti Subramanian, Kyeongjae Cho, Susan Fullerton-Shirey, Robert M. Wallace, Patrick M. Vora, Joshua Alexander Robinson

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.

Original languageEnglish (US)
Article number1706950
JournalAdvanced Functional Materials
Volume28
Issue number16
DOIs
StatePublished - Apr 18 2018

Fingerprint

Rhenium
rhenium
Photonics
Monolayers
Tuning
tuning
Doping (additives)
photonics
electronics
Molybdenum
Charge transfer
routes
charge transfer
Niobium
molybdenum disulfides
Tungsten
Aluminum Oxide
Substrates
Sulfur
Passivation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Zhang, Kehao ; Bersch, Brian M. ; Joshi, Jaydeep ; Addou, Rafik ; Cormier, Christopher R. ; Zhang, Chenxi ; Xu, Ke ; Briggs, Natalie C. ; Wang, Ke ; Subramanian, Shruti ; Cho, Kyeongjae ; Fullerton-Shirey, Susan ; Wallace, Robert M. ; Vora, Patrick M. ; Robinson, Joshua Alexander. / Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping In: Advanced Functional Materials. 2018 ; Vol. 28, No. 16.
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abstract = "Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at{\%}. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at{\%} Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at{\%} Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.",
author = "Kehao Zhang and Bersch, {Brian M.} and Jaydeep Joshi and Rafik Addou and Cormier, {Christopher R.} and Chenxi Zhang and Ke Xu and Briggs, {Natalie C.} and Ke Wang and Shruti Subramanian and Kyeongjae Cho and Susan Fullerton-Shirey and Wallace, {Robert M.} and Vora, {Patrick M.} and Robinson, {Joshua Alexander}",
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Zhang, K, Bersch, BM, Joshi, J, Addou, R, Cormier, CR, Zhang, C, Xu, K, Briggs, NC, Wang, K, Subramanian, S, Cho, K, Fullerton-Shirey, S, Wallace, RM, Vora, PM & Robinson, JA 2018, ' Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping ', Advanced Functional Materials, vol. 28, no. 16, 1706950. https://doi.org/10.1002/adfm.201706950

Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping . / Zhang, Kehao; Bersch, Brian M.; Joshi, Jaydeep; Addou, Rafik; Cormier, Christopher R.; Zhang, Chenxi; Xu, Ke; Briggs, Natalie C.; Wang, Ke; Subramanian, Shruti; Cho, Kyeongjae; Fullerton-Shirey, Susan; Wallace, Robert M.; Vora, Patrick M.; Robinson, Joshua Alexander.

In: Advanced Functional Materials, Vol. 28, No. 16, 1706950, 18.04.2018.

Research output: Contribution to journalArticle

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T1 - Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

AU - Zhang, Kehao

AU - Bersch, Brian M.

AU - Joshi, Jaydeep

AU - Addou, Rafik

AU - Cormier, Christopher R.

AU - Zhang, Chenxi

AU - Xu, Ke

AU - Briggs, Natalie C.

AU - Wang, Ke

AU - Subramanian, Shruti

AU - Cho, Kyeongjae

AU - Fullerton-Shirey, Susan

AU - Wallace, Robert M.

AU - Vora, Patrick M.

AU - Robinson, Joshua Alexander

PY - 2018/4/18

Y1 - 2018/4/18

N2 - Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.

AB - Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.

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