Abstract
Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.
| Original language | English (US) |
|---|---|
| Article number | 1706950 |
| Journal | Advanced Functional Materials |
| Volume | 28 |
| Issue number | 16 |
| DOIs | |
| State | Published - Apr 18 2018 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
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Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping . / Zhang, Kehao; Bersch, Brian M.; Joshi, Jaydeep; Addou, Rafik; Cormier, Christopher R.; Zhang, Chenxi; Xu, Ke; Briggs, Natalie C.; Wang, Ke; Subramanian, Shruti; Cho, Kyeongjae; Fullerton-Shirey, Susan; Wallace, Robert M.; Vora, Patrick M.; Robinson, Joshua Alexander.
In: Advanced Functional Materials, Vol. 28, No. 16, 1706950, 18.04.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping
AU - Zhang, Kehao
AU - Bersch, Brian M.
AU - Joshi, Jaydeep
AU - Addou, Rafik
AU - Cormier, Christopher R.
AU - Zhang, Chenxi
AU - Xu, Ke
AU - Briggs, Natalie C.
AU - Wang, Ke
AU - Subramanian, Shruti
AU - Cho, Kyeongjae
AU - Fullerton-Shirey, Susan
AU - Wallace, Robert M.
AU - Vora, Patrick M.
AU - Robinson, Joshua Alexander
PY - 2018/4/18
Y1 - 2018/4/18
N2 - Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.
AB - Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) doping of molybdenum disulfide (MoS 2 ) and tungsten (W) doping of molybdenum diselenide (MoSe 2 ) have suggested that substitutional doping may provide an efficient route to tune the doping type and suppress deep trap levels of 2D materials. To date, the impact of the doping on the structural, electronic, and photonic properties of in situ-doped monolayers remains unanswered due to challenges including strong film substrate charge transfer, and difficulty achieving doping concentrations greater than 0.3 at%. Here, in situ rhenium (Re) doping of synthetic monolayer MoS 2 with ≈1 at% Re is demonstrated. To limit substrate film charge transfer, r-plane sapphire is used. Electronic measurements demonstrate that 1 at% Re doping achieves nearly degenerate n-type doping, which agrees with density functional theory calculations. Moreover, low-temperature photoluminescence indicates a significant quench of the defect-bound emission when Re is introduced, which is attributed to the MoO bond and sulfur vacancies passivation and reduction in gap states due to the presence of Re. The work presented here demonstrates that Re doping of MoS 2 is a promising route toward electronic and photonic engineering of 2D materials.
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U2 - 10.1002/adfm.201706950
DO - 10.1002/adfm.201706950
M3 - Article
AN - SCOPUS:85042100716
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 16
M1 - 1706950
ER -