Tuning the Er3+ sensitization by Si nanoparticles in nanostructured as-grown Al2 O3 films

S. Núez-Sánchez, R. Serna, J. García López, A. K. Petford-Long, M. Tanase, B. Kabius

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Nanostructured films consisting of single Si nanoparticles (NPs) and Er3+ ions layers separated by nanometer-scale Al2 O 3 layers of controlled thickness have been prepared in order to tune the energy transfer between Si NPs and Er3+ ions. The amorphous Si NPs with an effective diameter of ∼4.5 nm are formed during growth and are able to sensitize the Er3+ ions efficiently with no postannealing treatments. The characteristic distance for energy transfer from Si NPs to Er3+ ions in Al2 O3 is found to be in the 1 nm range. It is shown that in the nanostructured films, it is possible to achieve an optimized configuration in which almost all the Er3+ ions have the potential to be excited by the Si NPs. This result stresses the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.

Original languageEnglish (US)
Article number013118
JournalJournal of Applied Physics
Issue number1
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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